Diodes DMT4008LFDF-7

安装类型

表面贴装

包装/外壳

U-DFN2020-6

供应商器件包装

U-DFN2020-6 (Type F)

Continuous Drain Current Id

11.8

Number of Elements per Chip

1

Package Type

U-DFN2020

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

3.5 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

800 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002293 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

17.1 nC

Rds On - Drain-Source Resistance

9.5 mOhms

Typical Turn-Off Delay Time

17.1 ns

Id - Continuous Drain Current

11.8 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

11.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

800mW (Ta)

Product Status

活跃

系列

DMT4008LFDF

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

6

配置

Single

通道数量

1 Channel

功率耗散

2

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

9.5mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 250µA

输入电容(Ciss)(Max)@Vds

1179 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

17.1 nC @ 10 V

上升时间

3.7 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET