Diodes DMTH10H032LFVW-13

包装/外壳

Axial, Box

安装类型

Surface Mount, Wettable Flank

越来越多的功能

Flanges

供应商器件包装

PowerDI3333-8 (SWP) Type UX

Package

Bulk

Base Product Number

DMTH10

Current - Continuous Drain (Id) @ 25℃

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

1.7W (Ta)

Product Status

活跃

Package Type

PowerDI3333-8

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

1.3 V

Pd - Power Dissipation

3.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

11.9 nC

Rds On - Drain-Source Resistance

30 mOhms

Id - Continuous Drain Current

26 A

操作温度

-55°C ~ 250°C

系列

Military, MIL-PRF-39009, RER70

包装

Bulk

尺寸/尺寸

1.062 L x 1.080 W (26.97mm x 27.43mm)

容差

±1%

零件状态

活跃

温度系数

±100ppm/°C

电阻

332 mOhms

组成

Wirewound

功率(瓦特)

20W

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

失败率

R (0.01%)

通道数量

1 Channel

引线样式

焊片

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

683 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

11.9 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

涂层/外壳类型

Aluminum

信道型

N

场效应管特性

-

特征

Military, Moisture Resistant

产品类别

MOSFET

座位高度(最大)

0.561 (14.25mm)