Diodes Inc. DMG2307LQ-7

包装/外壳

SOT-23-3

安装类型

表面贴装

引脚数

3

供应商器件包装

SOT-23-3

Continuous Drain Current Id

3.8

Continuous Drain Current

3.8(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

SOT-23

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

4.8 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1.36 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

8.2 nC

Rds On - Drain-Source Resistance

90 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22.4 ns

Id - Continuous Drain Current

3.8 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Diodes Incorporated

Power Dissipation (Max)

760mW (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3V @ 250µA

包装

卷带

系列

DMG2307L

操作温度

-55°C ~ 150°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

Si

极性

P

配置

Single

通道数量

1 Channel

功率耗散

1.9

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 2.5A, 10V

输入电容(Ciss)(Max)@Vds

371.3 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

8.2 nC @ 10 V

上升时间

7.3 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET