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价格梯度
内地含税价
1
¥7.084729
10
¥6.683711
100
¥6.305383
500
¥5.948476
1000
¥5.611769
Diodes Inc. DMG4800LSDQ-13
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DMG4800LSDQ-13
671-DMG4800LSDQ-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

Power Field-Effect Transistor, 6.4A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
--最小包装量--
¥
总价: ¥
DMG4800LSDQ-13详情
Diodes Inc. DMG4800LSDQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
15 Weeks
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
表面安装
YES
引脚数
8
供应商器件包装
8-SOP
终端数量
8
晶体管元件材料
SILICON
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Pd - Power Dissipation
1.17 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
8.56 nC
Rds On - Drain-Source Resistance
16 mOhms
RoHS
Details
Id - Continuous Drain Current
7.5 A
Package
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25℃
7.5A (Ta)
厂商
Diodes Incorporated
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.6V @ 250µA
Package Description
SMALL OUTLINE, R-PDSO-G8
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
40
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
DMG4800LSDQ-13
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
活跃
Ihs Manufacturer
DIODES INC
Risk Rank
1.63
Part Package Code
SOT
Drain Current-Max (ID)
6.4 A
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
系列
Automotive, AEC-Q101
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
附加功能
HIGH RELIABILITY
子类别
MOSFETs
技术
Si
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
参考标准
AEC-Q101
JESD-30代码
R-PDSO-G8
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
通道数量
2 Channel
操作模式
增强型MOSFET
功率 - 最大
1.17W
场效应管类型
2 N-Channel (Dual)
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
16mOhm @ 9A, 10V
输入电容(Ciss)(Max)@Vds
798pF @ 10V
门极电荷(Qg)(最大)@Vgs
8.56nC @ 5V
漏源电压 (Vdss)
30V
极性/通道类型
N-CHANNEL
产品类别
MOSFET
最大漏极电流 (Abs) (ID)
9.8 A
漏极-源极导通最大电阻
0.016 Ω
脉冲漏极电流-最大值(IDM)
42 A
DS 击穿电压-最小值
30 V
信道型
Dual N
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
1.17 W
场效应管特性
Standard
产品类别
MOSFET
达到SVHC
compliant
DMG4800LSDQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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