Diodes Inc. DMG6602SVT
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DMG6602SVT
671-DMG6602SVT
晶体管 - FET,MOSFET - 单个
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Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOT23, 6 PIN
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DMG6602SVT详情
Diodes Inc. DMG6602SVT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
MSL
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Qualification
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Transistor Polarity
Complementary N and P Channel
Continuous Drain Current Id
3.4A
信道型
Complementary N and P Channel
DMG6602SVT拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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