Diodes Inc. DMN2600UFB-7B
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DMN2600UFB-7B
671-DMN2600UFB-7B
晶体管 - FET,MOSFET - 单个
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大陆
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Small Signal Field-Effect Transistor, 1.3A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
1最小包装量--
DMN2600UFB-7B详情
Diodes Inc. DMN2600UFB-7B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
引脚数
3
终端数量
3
晶体管元件材料
SILICON
RoHS
Compliant
Package Description
GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
Package Style
CHIP CARRIER
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
40
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
DMN2600UFB-7B
Package Shape
RECTANGULAR
Manufacturer
Diodes Incorporated
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
DIODES INC
Risk Rank
5.71
Part Package Code
DFN
Drain Current-Max (ID)
1.3 A
JESD-609代码
e4
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Nickel/Palladium/Gold (Ni/Pd/Au)
附加功能
HIGH RELIABILITY, LOW THRESHOLD
子类别
FET 通用电源
端子位置
BOTTOM
终端形式
无铅
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
引脚数量
3
JESD-30代码
R-PBCC-N3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
最大漏极电流 (Abs) (ID)
1.3 A
漏极-源极导通最大电阻
0.35 Ω
DS 击穿电压-最小值
25 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.54 W
DMN2600UFB-7B拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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