Diodes Inc. DMP4025LSDQ-13
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DMP4025LSDQ-13
671-DMP4025LSDQ-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

Small Signal Field-Effect Transistor, 5.8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
1最小包装量--
DMP4025LSDQ-13详情
Diodes Inc. DMP4025LSDQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
15 Weeks
包装/外壳
8-SOIC (0.154, 3.90mm Width)
安装类型
表面贴装
表面安装
YES
供应商器件包装
8-SO
终端数量
8
晶体管元件材料
SILICON
Factory Pack QuantityFactory Pack Quantity
2500
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.8V @ 250µA
Product Status
活跃
厂商
Diodes Incorporated
Current - Continuous Drain (Id) @ 25℃
5.8A (Ta)
Package
Tape & Reel (TR)
Package Description
SOP-8
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Reflow Temperature-Max (s)
30
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
DMP4025LSDQ-13
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
活跃
Ihs Manufacturer
DIODES INC
Risk Rank
1.62
Drain Current-Max (ID)
5.8 A
包装
Reel
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
附加功能
HIGH RELIABILITY
子类别
MOSFETs
技术
Si
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
参考标准
AEC-Q101
JESD-30代码
R-PDSO-G8
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
功率 - 最大
1.25W (Ta)
场效应管类型
2 P-Channel (Dual)
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
25mOhm @ 3A, 10V
输入电容(Ciss)(Max)@Vds
1640pF @ 20V
门极电荷(Qg)(最大)@Vgs
33.7nC @ 10V
漏源电压 (Vdss)
40V
极性/通道类型
P-CHANNEL
产品类别
MOSFET
最大漏极电流 (Abs) (ID)
7.6 A
漏极-源极导通最大电阻
0.045 Ω
DS 击穿电压-最小值
40 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.14 W
场效应管特性
Standard
产品类别
MOSFET
达到SVHC
compliant
DMP4025LSDQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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