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价格梯度
内地含税价
1
¥2.405461
10
¥2.269306
100
¥2.14085
500
¥2.019672
1000
¥1.905354
Diodes Incorporated DMG1012UWQ-7
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- 对比
DMG1012UWQ-7
671-DMG1012UWQ-7
晶体管 - FET,MOSFET - 单个
6-TSSOP, SC-88, SOT-363
大陆
立即发货

MOSFET BVDSS: 8V~24V SOT323 T&R
--最小包装量--
¥
总价: ¥
DMG1012UWQ-7详情
Diodes Incorporated DMG1012UWQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
供应商器件包装
SOT-363
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Power Dissipation (Max)
460mW
Package Type
SOT-323
Channel Mode
Enhancement
Vds - Drain-Source Breakdown Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
460 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 6 V, + 6 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
1 nC
Rds On - Drain-Source Resistance
450 mOhms
RoHS
Details
Id - Continuous Drain Current
950 mA
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
引脚数量
3
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
450mOhm @ 600mA, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
43 pF @ 16 V
门极电荷(Qg)(最大)@Vgs
1 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±6V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMG1012UWQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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