Diodes Incorporated DMN10H220LFDF-7
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DMN10H220LFDF-7
671-DMN10H220LFDF-7
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET BVDSS: 61V~100V U-DFN2020
--最小包装量--
DMN10H220LFDF-7详情
Diodes Incorporated DMN10H220LFDF-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
U-DFN2020-6 (Type F)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1.1W (Ta)
Number of Elements per Chip
1
Package Type
U-DFN2020
Channel Mode
Enhancement
MSL
-
Qualification
-
Continuous Drain Current Id
2.2A
Vds - Drain-Source Breakdown Voltage
100 V
Typical Turn-On Delay Time
6.2 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1.1 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.002293 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
3.7 nC, 6.7 nC
Rds On - Drain-Source Resistance
225 mOhms
RoHS
Details
Typical Turn-Off Delay Time
7.4 ns
Id - Continuous Drain Current
2.2 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
引脚数量
6
配置
Single
通道数量
1 Channel
功率耗散
1.1W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
225mOhm @ 2A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
384 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
6.7 nC @ 10 V
上升时间
8.7 ns
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 N - Channel
信道型
N
场效应管特性
-
产品类别
MOSFET
DMN10H220LFDF-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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