Diodes Incorporated DMN14M8UFDF-7
- 收藏
- 对比
DMN14M8UFDF-7
671-DMN14M8UFDF-7
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET BVDSS: 8V~24V U-DFN2020-6
1最小包装量--
DMN14M8UFDF-7详情
Diodes Incorporated DMN14M8UFDF-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
U-DFN2020-6 (Type F)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
14.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Power Dissipation (Max)
1.1W (Ta)
Continuous Drain Current Id
14.7
Factory Pack QuantityFactory Pack Quantity
3000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Vds - Drain-Source Breakdown Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Pd - Power Dissipation
1.9 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
29.5 nC
Rds On - Drain-Source Resistance
6 mOhms
Id - Continuous Drain Current
14.7 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
通道数量
1 Channel
功率耗散
1.9
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6mOhm @ 12A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.2V @ 250μA
输入电容(Ciss)(Max)@Vds
1246 pF @ 6 V
门极电荷(Qg)(最大)@Vgs
29.5 nC @ 10 V
漏源电压 (Vdss)
12 V
Vgs(最大值)
±8V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
DMN14M8UFDF-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







哦! 它是空的。