Diodes Incorporated DMN22M5UFG-13
- 收藏
- 对比
DMN22M5UFG-13
671-DMN22M5UFG-13
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 8V~24V POWERDI3333
1最小包装量--
DMN22M5UFG-13详情
Diodes Incorporated DMN22M5UFG-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
24A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.3V @ 250μA
Power Dissipation (Max)
600mW (Ta)
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
8.1 ns
Vgs th - Gate-Source Threshold Voltage
1.3 V
Pd - Power Dissipation
600 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Unit Weight
0.001058 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
99 nC
Rds On - Drain-Source Resistance
2.5 mOhms
RoHS
Details
Typical Turn-Off Delay Time
72.1 ns
Id - Continuous Drain Current
27 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2mOhm @ 13.5A, 4.5V
输入电容(Ciss)(Max)@Vds
3926 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
99 nC @ 10 V
上升时间
22.5 ns
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
DMN22M5UFG-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







哦! 它是空的。