Diodes Incorporated DMN2310U-13

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

SOT-23-3

厂商

Diodes Incorporated

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

950mV @ 250μA

Power Dissipation (Max)

480mW (Ta)

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

950 mV

Pd - Power Dissipation

680 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

700 pC

Rds On - Drain-Source Resistance

175 mOhms

Typical Turn-Off Delay Time

154 ns

Id - Continuous Drain Current

1.6 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

175mOhm @ 300mA, 4.5V

输入电容(Ciss)(Max)@Vds

38 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

0.7 nC @ 4.5 V

上升时间

138 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET