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价格梯度
内地含税价
1
¥2.268163
10
¥2.139777
100
¥2.018653
500
¥1.90439
1000
¥1.796597
Diodes Incorporated DMN3060LW-7
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- 对比
DMN3060LW-7
671-DMN3060LW-7
晶体管 - FET,MOSFET - 单个
SC-70, SOT-323
大陆
立即发货

MOSFET BVDSS: 25V~30V SOT323 T&R
--最小包装量--
¥
总价: ¥
DMN3060LW-7详情
Diodes Incorporated DMN3060LW-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-70, SOT-323
供应商器件包装
SOT-323
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
500mW (Ta)
Continuous Drain Current Id
2.6
Number of Elements per Chip
1
Package Type
SOT-323
Channel Mode
Enhancement
MSL
-
Qualification
-
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
5.8 ns
Vgs th - Gate-Source Threshold Voltage
1.8 V
Pd - Power Dissipation
500 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
5.6 nC
Rds On - Drain-Source Resistance
60 mOhms
Typical Turn-Off Delay Time
18.3 ns
Id - Continuous Drain Current
2.6 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
引脚数量
3
通道数量
1 Channel
功率耗散
640
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
60mOhm @ 3.1A, 10V
不同 Id 时 Vgs(th)(最大值)
1.8V @ 250μA
输入电容(Ciss)(Max)@Vds
395 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
5.6 nC @ 4.5 V
上升时间
30.8 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±12V
产品类别
MOSFET
晶体管类型
1 N-Channel
信道型
N通道
场效应管特性
-
产品类别
MOSFET
DMN3060LW-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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