Diodes Incorporated DMN3110SQ-7

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

SOT-23-3

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

740mW (Ta)

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2.6 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Qualification

AEC-Q101

Pd - Power Dissipation

740 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.8 mS

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

8.6 nC

Rds On - Drain-Source Resistance

73 mOhms

Typical Turn-Off Delay Time

13.1 ns

Id - Continuous Drain Current

2.5 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

73mOhm @ 3.1A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 250μA

输入电容(Ciss)(Max)@Vds

305.8 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

8.6 nC @ 10 V

上升时间

4.6 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET