Diodes Incorporated DMN6010SCTBQ-13
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DMN6010SCTBQ-13
671-DMN6010SCTBQ-13
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

MOSFET BVDSS: 41V~60V TO263 T&R
1最小包装量--
DMN6010SCTBQ-13详情
Diodes Incorporated DMN6010SCTBQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
TO-263AB (D2PAK)
Power Dissipation (Max)
5W (Ta), 312W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
128A (Tc)
Product Status
活跃
Package
Tape & Reel (TR)
厂商
Diodes Incorporated
操作温度
-55°C ~ 150°C (TJ)
系列
Automotive, AEC-Q101
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
10mOhm @ 25A, 10V
输入电容(Ciss)(Max)@Vds
2692 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
DMN6010SCTBQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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