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价格梯度
内地含税价
1
¥0.817127
500
¥0.600825
1000
¥0.50069
2000
¥0.459349
5000
¥0.429294
10000
¥0.399349
15000
¥0.386218
50000
¥0.379762
Diodes Incorporated DMN65D8LT-7
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- 对比
DMN65D8LT-7
671-DMN65D8LT-7
晶体管 - FET,MOSFET - 单个
SOT-523
大陆
立即发货

MOSFET BVDSS: 41V~60V SOT523 T&R
--最小包装量--
¥
总价: ¥
DMN65D8LT-7详情
Diodes Incorporated DMN65D8LT-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-523
供应商器件包装
SOT-523
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Power Dissipation (Max)
300mW (Ta)
Base Product Number
DMN65
Vds - Drain-Source Breakdown Voltage
60 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
370 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
870 pC
Rds On - Drain-Source Resistance
3 Ohms
Id - Continuous Drain Current
310 mA
系列
-
操作温度
-55°C ~ 150°C (TJ)
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5Ohm @ 115mA, 10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250μA
输入电容(Ciss)(Max)@Vds
24 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
0.4 nC @ 4.5 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
DMN65D8LT-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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