Diodes Incorporated DMP1008UCB9-7
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DMP1008UCB9-7
671-DMP1008UCB9-7
晶体管 - FET,MOSFET - 单个
9-UFBGA, WLBGA
大陆
立即发货

MOSFET BVDSS: 8V~24V U-WLB1515-9
1最小包装量--
DMP1008UCB9-7详情
Diodes Incorporated DMP1008UCB9-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
9-UFBGA, WLBGA
供应商器件包装
U-WLB1515-9
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Power Dissipation (Max)
840mW (Ta)
Continuous Drain Current Id
13.2
MSL
MSL 1 - Unlimited
Qualification
-
Vds - Drain-Source Breakdown Voltage
8 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
1.1 V
Pd - Power Dissipation
840 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 6 V, + 6 V
Unit Weight
0.000063 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
8.2 nC
Rds On - Drain-Source Resistance
5.7 mOhms
Typical Turn-Off Delay Time
99.6 ns
Id - Continuous Drain Current
9.8 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
1.53
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
5.7mOhm @ 2A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.1V @ 250μA
输入电容(Ciss)(Max)@Vds
900 pF @ 4 V
门极电荷(Qg)(最大)@Vgs
8.2 nC @ 4.5 V
上升时间
5.8 ns
漏源电压 (Vdss)
8 V
Vgs(最大值)
-6V
产品类别
MOSFET
晶体管类型
1 P-Channel
信道型
P Channel
场效应管特性
-
产品类别
MOSFET
DMP1008UCB9-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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