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价格梯度
内地含税价
1
¥6.153748
10
¥5.80542
100
¥5.476813
500
¥5.166808
1000
¥4.874349
Diodes Incorporated DMP2016UFDF-7
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DMP2016UFDF-7
671-DMP2016UFDF-7
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET BVDSS: 8V~24V U-DFN2020-6
--最小包装量--
¥
总价: ¥
DMP2016UFDF-7详情
Diodes Incorporated DMP2016UFDF-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
U-DFN2020-6 (Type F)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Power Dissipation (Max)
900mW (Ta)
Continuous Drain Current Id
9.5
Package Type
U-DFN2020
Channel Mode
Enhancement
Qualification
-
MSL
MSL 1 - Unlimited
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.1 V
Pd - Power Dissipation
1.8 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
30 nC
Rds On - Drain-Source Resistance
15 mOhms
Id - Continuous Drain Current
9.5 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
引脚数量
6
通道数量
1 Channel
功率耗散
1.8
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
15mOhm @ 7A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.1V @ 250μA
输入电容(Ciss)(Max)@Vds
1710 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
30 nC @ 8 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±8V
信道型
P
场效应管特性
-
DMP2016UFDF-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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