Diodes Incorporated DMP2045UQ-13

包装/外壳

TO-236-3, SC-59, SOT-23-3

安装类型

表面贴装

供应商器件包装

SOT-23-3

Power Dissipation (Max)

800mW (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Current - Continuous Drain (Id) @ 25℃

4.3A (Ta)

Product Status

活跃

Package

Tape & Reel (TR)

厂商

Diodes Incorporated

Continuous Drain Current Id

4.3

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

4.2 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Qualification

AEC-Q101

Pd - Power Dissipation

800 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

6.8 nC

Rds On - Drain-Source Resistance

45 mOhms

RoHS

Details

Typical Turn-Off Delay Time

23 ns

Id - Continuous Drain Current

4.3 A

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

包装

Reel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.2

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

45mOhm @ 4A, 4.5V

输入电容(Ciss)(Max)@Vds

634 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6.8 nC @ 4.5 V

上升时间

3.4 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET