Diodes Incorporated DMP2070UQ-7
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DMP2070UQ-7
671-DMP2070UQ-7
晶体管 - FET,MOSFET - 单个
TO-236-3, SC-59, SOT-23-3
大陆
立即发货

MOSFET BVDSS: 8V~24V SOT23 T&R 3
1最小包装量--
DMP2070UQ-7详情
Diodes Incorporated DMP2070UQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23-3
厂商
Diodes Incorporated
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
950mV @ 250μA
Power Dissipation (Max)
830mW
Base Product Number
DMP2070
Factory Pack QuantityFactory Pack Quantity
3000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
950 mV
Pd - Power Dissipation
1.4 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
17.8 nC
Rds On - Drain-Source Resistance
74 mOhms
Id - Continuous Drain Current
4.6 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
44mOhm @ 2A, 4.5V
输入电容(Ciss)(Max)@Vds
118 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
8.2 nC @ 8 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±8V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
DMP2070UQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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