Diodes Incorporated DMP2110UFDBQ-7

安装类型

表面贴装

包装/外壳

6-UDFN Exposed Pad

供应商器件包装

U-DFN2020-6 (Type B)

厂商

Diodes Incorporated

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250μA

Power Dissipation (Max)

800mW (Ta)

Base Product Number

DMP2110

Brand

Diodes Incorporated

Manufacturer

Diodes Incorporated

Factory Pack QuantityFactory Pack Quantity

3000

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1.14 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

12.7 nC

Rds On - Drain-Source Resistance

75 mOhms

Id - Continuous Drain Current

3.2 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

2 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

80mOhm @ 2.8A, 4.5V

输入电容(Ciss)(Max)@Vds

443 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6 nC @ 4.5 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±10V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET