Diodes Incorporated DMP21D0UFB-7B

表面安装

YES

包装/外壳

X1-DFN1006-3

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

DMP21D0UFB-7B

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

DIODES INC

Part Package Code

DFN

Package Description

DFN1006-3, 3 PIN

Risk Rank

5.64

Drain Current-Max (ID)

0.86 A

Moisture Sensitivity Levels

1

Number of Elements

1

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Reflow Temperature-Max (s)

40

Continuous Drain Current Id

1.17

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

7.1 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

430 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.001544 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

50 mS

Channel Mode

Enhancement

Brand

Diodes Incorporated

Qg - Gate Charge

1.5 nC

Rds On - Drain-Source Resistance

960 mOhms

RoHS

Details

Typical Turn-Off Delay Time

31.7 ns

Id - Continuous Drain Current

770 mA

系列

DMP21D0UFB

包装

MouseReel

JESD-609代码

e4

无铅代码

有

ECCN 代码

EAR99

端子表面处理

Nickel/Palladium/Gold (Ni/Pd/Au)

附加功能

HIGH RELIABILITY, LOW THRESHOLD

技术

Si

端子位置

BOTTOM

终端形式

无铅

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PBCC-N3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

8 ns

极性/通道类型

P-CHANNEL

产品类别

MOSFET

晶体管类型

1 P-Channel, ESD

最大漏极电流 (Abs) (ID)

1.17 A

漏极-源极导通最大电阻

0.4 Ω

DS 击穿电压-最小值

20 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.99 W

产品

MOSFET

产品类别

MOSFET

宽度

0.6 mm

高度

0.5 mm

长度

1 mm