Diodes Incorporated DMP22D5UFO-7B

安装类型

表面贴装

包装/外壳

3-XFDFN

供应商器件包装

X2-DFN0604-3

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

530mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Power Dissipation (Max)

340mW (Ta)

Continuous Drain Current Id

530

Number of Elements per Chip

1

Package Type

X2-DFN0604-3

Channel Mode

Enhancement

Qualification

-

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

7.3 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

770 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000035 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

300 pC

Rds On - Drain-Source Resistance

1.9 Ohms

Typical Turn-Off Delay Time

185 ns

Id - Continuous Drain Current

340 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

770

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

1.9Ohm @ 100mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 250μA

输入电容(Ciss)(Max)@Vds

17 pF @ 16 V

门极电荷(Qg)(最大)@Vgs

0.3 nC @ 4.5 V

上升时间

20.7 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P Channel

场效应管特性

-

产品类别

MOSFET