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价格梯度
内地含税价
1
¥8.55165
10
¥8.067595
100
¥7.610937
500
¥7.180128
1000
¥6.773706
Diodes Incorporated DMP3011SSS-13
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- 对比
DMP3011SSS-13
671-DMP3011SSS-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET BVDSS: 25V~30V SO-8 T&R 2
--最小包装量--
¥
总价: ¥
DMP3011SSS-13详情
Diodes Incorporated DMP3011SSS-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
8-SOIC (0.154", 3.90mm Width)
安装类型
表面贴装
供应商器件包装
8-SO
Base Product Number
DMP3011
Power Dissipation (Max)
1.4W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25℃
11A (Ta), 32A (Tc)
Product Status
活跃
厂商
Diodes Incorporated
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
1.4 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
10 mOhms
Id - Continuous Drain Current
11 A
操作温度
-55°C ~ 150°C (TJ)
系列
-
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
10mOhm @ 11.5A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
2380 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMP3011SSS-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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