Diodes Incorporated DMP3045LFVWQ-13
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DMP3045LFVWQ-13
671-DMP3045LFVWQ-13
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 25V~30V POWERDI333
1最小包装量--
DMP3045LFVWQ-13详情
Diodes Incorporated DMP3045LFVWQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8 (SWP) Type UX
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5.7A (Ta), 19.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.1V @ 250μA
Power Dissipation (Max)
900mW (Ta)
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Pd - Power Dissipation
2.1 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
13.6 nC
Rds On - Drain-Source Resistance
42 mOhms
Id - Continuous Drain Current
19.9 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
42mOhm @ 4.9A, 10V
输入电容(Ciss)(Max)@Vds
782 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
13.6 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMP3045LFVWQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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