Diodes Incorporated DMP3045LVT-13
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DMP3045LVT-13
671-DMP3045LVT-13
晶体管 - FET,MOSFET - 单个
SOT-23-6 Thin, TSOT-23-6
大陆
立即发货

MOSFET BVDSS: 25V~30V TSOT26 T&R
1最小包装量--
DMP3045LVT-13详情
Diodes Incorporated DMP3045LVT-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
TSOT-26
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1.2W (Ta)
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Pd - Power Dissipation
1.2 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
7 nC
Rds On - Drain-Source Resistance
42 mOhms
Id - Continuous Drain Current
5.4 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
42mOhm @ 4.9A, 10V
不同 Id 时 Vgs(th)(最大值)
2.1V @ 250μA
输入电容(Ciss)(Max)@Vds
749 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
14.3 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMP3045LVT-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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