Diodes Incorporated DMP3050LVTQ-7
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- 对比
DMP3050LVTQ-7
671-DMP3050LVTQ-7
晶体管 - FET,MOSFET - 单个
SOT-23-6 Thin, TSOT-23-6
大陆
立即发货

MOSFET MOSFET BVDSS: 25V 30V TSOT26 T&R 3K
--最小包装量--
DMP3050LVTQ-7详情
Diodes Incorporated DMP3050LVTQ-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
引脚数
6
供应商器件包装
TSOT-26
Channel Mode
Enhancement
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
4.5 A
Rds On - Drain-Source Resistance
50 mOhms
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
5.1 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.6 W
Package
Bulk
Base Product Number
DMP3050
Current - Continuous Drain (Id) @ 25℃
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Diodes Incorporated
Power Dissipation (Max)
1.6W (Ta)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 250µA
Package Type
TSOT-26
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
系列
Automotive, AEC-Q101
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
50mOhm @ 4.5A, 10V
输入电容(Ciss)(Max)@Vds
620 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
10.5 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
信道型
P
场效应管特性
-
产品
MOSFET
DMP3050LVTQ-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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