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价格梯度
内地含税价
1
¥5.076056
10
¥4.788733
100
¥4.517674
500
¥4.261956
1000
¥4.020714
Diodes Incorporated DMP3056LSSQ-13
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DMP3056LSSQ-13
671-DMP3056LSSQ-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET BVDSS: 25V~30V SO-8 T&R 2
--最小包装量--
¥
总价: ¥
DMP3056LSSQ-13详情
Diodes Incorporated DMP3056LSSQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SO
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.1V @ 250μA
Power Dissipation (Max)
1.2W (Ta)
Continuous Drain Current Id
4.9
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Id - Continuous Drain Current
4.9 A
Typical Turn-Off Delay Time
43 ns
RoHS
Details
Rds On - Drain-Source Resistance
45 mOhms
Qg - Gate Charge
17.3 nC
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Channel Mode
Enhancement
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
2500
Minimum Operating Temperature
- 55 C
Unit Weight
0.026455 oz
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
P-Channel
Pd - Power Dissipation
1.2 W
Vgs th - Gate-Source Threshold Voltage
2.1 V
Typical Turn-On Delay Time
4.7 ns
Vds - Drain-Source Breakdown Voltage
30 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
包装
切割胶带
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
1.6
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
45mOhm @ 6A, 10V
输入电容(Ciss)(Max)@Vds
969 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
17.3 nC @ 10 V
上升时间
5 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 P-Channel
信道型
P Channel
场效应管特性
-
产品类别
MOSFET
DMP3056LSSQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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