Diodes Incorporated DMT10H009SCG-7
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DMT10H009SCG-7
671-DMT10H009SCG-7
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 61V~100V V-DFN3333
1最小包装量--
DMT10H009SCG-7详情
Diodes Incorporated DMT10H009SCG-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
V-DFN3333-8 (Type B)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
1.3W (Ta)
Base Product Number
DMT10
Factory Pack QuantityFactory Pack Quantity
2000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
9.5mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
2085 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
30 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
DMT10H009SCG-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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