Diodes Incorporated DMT10H010LSSQ-13
- 收藏
- 对比
DMT10H010LSSQ-13
671-DMT10H010LSSQ-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET BVDSS: 61V~100V SO-8 T&R
1最小包装量--
DMT10H010LSSQ-13详情
Diodes Incorporated DMT10H010LSSQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SO
厂商
Diodes Incorporated
Current - Continuous Drain (Id) @ 25℃
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.8V @ 250μA
Power Dissipation (Max)
1.9W (Ta)
Qualification
AEC-Q101
包装
Tape & Reel (TR)
操作温度
-55°C ~ 150°C (TJ)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
9.5mOhm @ 13A, 10V
输入电容(Ciss)(Max)@Vds
4166 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
58.4 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
职系
汽车
DMT10H010LSSQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated








哦! 它是空的。