Diodes Incorporated DMT10H032LSS-13
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DMT10H032LSS-13
671-DMT10H032LSS-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET BVDSS: 61V~100V SO-8 T&R
1最小包装量--
DMT10H032LSS-13详情
Diodes Incorporated DMT10H032LSS-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SO
厂商
Diodes Incorporated
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
Power Dissipation (Max)
1.3W (Ta)
Base Product Number
DMT10
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Factory Pack QuantityFactory Pack Quantity
2500
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
32mOhm @ 10A, 10V
输入电容(Ciss)(Max)@Vds
683 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
11.9 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
场效应管特性
-
产品类别
Diodes Inc.
DMT10H032LSS-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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