Diodes Incorporated DMT10H9M9LCT
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DMT10H9M9LCT
671-DMT10H9M9LCT
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

MOSFET BVDSS: 61V~100V TO220AB T
1最小包装量--
DMT10H9M9LCT详情
Diodes Incorporated DMT10H9M9LCT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
引脚数
3
供应商器件包装
TO-220-3
厂商
Diodes Incorporated
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
Power Dissipation (Max)
2.3W (Ta), 156W (Tc)
Base Product Number
DMT10
Continuous Drain Current Id
101
Number of Elements per Chip
1
Package Type
TO-220AB
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
-
Factory Pack QuantityFactory Pack Quantity
50
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Tube
子类别
MOSFETs
功率耗散
2.3
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8.5mOhm @ 20A, 10V
输入电容(Ciss)(Max)@Vds
2309 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
40.2 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
DMT10H9M9LCT拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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