Diodes Incorporated DMT10H9M9SCT

包装/外壳

TO-220-3

安装类型

通孔

引脚数

3

供应商器件包装

TO-220-3

Base Product Number

DMT10

Power Dissipation (Max)

2.3W (Ta), 156W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.9V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

99A (Tc)

Product Status

活跃

Package

Tube

厂商

Diodes Incorporated

Continuous Drain Current Id

99

Number of Elements per Chip

1

Package Type

TO-220AB

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Factory Pack QuantityFactory Pack Quantity

50

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

功率耗散

156

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.8mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2085 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

30 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET