Diodes Incorporated DMT10H9M9SH3
- 收藏
- 对比
DMT10H9M9SH3
671-DMT10H9M9SH3
晶体管 - FET,MOSFET - 单个
TO-251-3 Stub Leads, IPak
大陆
立即发货

MOSFET BVDSS: 61V~100V TO251 TUB
1最小包装量--
DMT10H9M9SH3详情
Diodes Incorporated DMT10H9M9SH3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-251-3 Stub Leads, IPak
供应商器件包装
TO-251
厂商
Diodes Incorporated
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Power Dissipation (Max)
114W (Tc)
Base Product Number
DMT10
Continuous Drain Current Id
84
Qualification
-
Factory Pack QuantityFactory Pack Quantity
75
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Tube
子类别
MOSFETs
功率耗散
114
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
9mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
2085 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
30 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
DMT10H9M9SH3拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







哦! 它是空的。