Diodes Incorporated DMT12H060LFDF-7
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DMT12H060LFDF-7
671-DMT12H060LFDF-7
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET BVDSS: 101V~250V U-DFN202
1最小包装量--
DMT12H060LFDF-7详情
Diodes Incorporated DMT12H060LFDF-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
U-DFN2020-6 (Type F)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Power Dissipation (Max)
1.1W (Ta)
Vds - Drain-Source Breakdown Voltage
115 V
Vgs th - Gate-Source Threshold Voltage
1.4 V
Pd - Power Dissipation
2 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Id - Continuous Drain Current
4.4 A
Rds On - Drain-Source Resistance
65 mOhms
Qg - Gate Charge
7.8 nC
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Channel Mode
Enhancement
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
3000
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
65mOhm @ 3A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.4V @ 250μA
输入电容(Ciss)(Max)@Vds
475 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
7.8 nC @ 4.5 V
漏源电压 (Vdss)
115 V
Vgs(最大值)
±8V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMT12H060LFDF-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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