Diodes Incorporated DMT35M4LFDF4-7

安装类型

表面贴装

包装/外壳

6-PowerXDFN

供应商器件包装

X2-DFN2020-6 (Type W)

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

910mW (Ta)

Base Product Number

DMT35M4LF

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

910 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

8.1 nC

Rds On - Drain-Source Resistance

9 mOhms

Id - Continuous Drain Current

12 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

9mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250μA

输入电容(Ciss)(Max)@Vds

1009 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

14.9 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET