Diodes Incorporated DMT6012LSS-13
- 收藏
- 对比
DMT6012LSS-13
671-DMT6012LSS-13
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

MOSFET N-CH 60V8SOIC
1最小包装量--
DMT6012LSS-13详情
Diodes Incorporated DMT6012LSS-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
32 Weeks
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
Current - Continuous Drain (Id) @ 25℃
10.4A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
1.2W Ta
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
JESD-609代码
e4
零件状态
活跃
湿度敏感性等级(MSL)
1 (Unlimited)
端子表面处理
Nickel/Palladium/Gold (Ni/Pd/Au)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
11m Ω @ 10A, 10V
输入电容(Ciss)(Max)@Vds
1522pF @ 30V
门极电荷(Qg)(最大)@Vgs
22.2nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
DMT6012LSS-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated








哦! 它是空的。