Diodes Incorporated DMT8008SCT
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DMT8008SCT
671-DMT8008SCT
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

MOSFET BVDSS: 61V~100V TO220AB T
1最小包装量--
DMT8008SCT详情
Diodes Incorporated DMT8008SCT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
TO-220-3
厂商
Diodes Incorporated
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.4W (Ta), 167W (Tc)
Base Product Number
DMT8008
Continuous Drain Current Id
111
Number of Elements per Chip
1
Package Type
TO-220AB
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
-
Factory Pack QuantityFactory Pack Quantity
50
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Tube
子类别
MOSFETs
引脚数量
3
功率耗散
167
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
7.5mOhm @ 30A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
1950 pF @ 40 V
门极电荷(Qg)(最大)@Vgs
34 nC @ 10 V
漏源电压 (Vdss)
80 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
DMT8008SCT拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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