Diodes Incorporated DMTH10H4M6SPS-13

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PowerDI5060-8

厂商

Diodes Incorporated

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

20A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Power Dissipation (Max)

2.7W (Ta), 136W (Tc)

Base Product Number

DMTH10

Number of Elements per Chip

1

Package Type

PowerDI5060-8

Channel Mode

Enhancement

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

100A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

2.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Qg - Gate Charge

66 nC

Rds On - Drain-Source Resistance

4.6 mOhms

RoHS

Details

Id - Continuous Drain Current

100 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

136W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.6mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

4327 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

66 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

Dual N Channel

场效应管特性

-

产品类别

MOSFET