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价格梯度
内地含税价
1
¥8.923362
10
¥8.418262
100
¥7.94176
500
¥7.492224
1000
¥7.068138
Diodes Incorporated DMTH4002SCTBQ-13
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DMTH4002SCTBQ-13
671-DMTH4002SCTBQ-13
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

MOSFET BVDSS: 31V~40V TO263 T&R
--最小包装量--
¥
总价: ¥
DMTH4002SCTBQ-13详情
Diodes Incorporated DMTH4002SCTBQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
引脚数
3
供应商器件包装
TO-263AB (D2PAK)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
6W (Ta), 166.7W (Tc)
Continuous Drain Current Id
192
Number of Elements per Chip
1
Package Type
TO-263AB
Channel Mode
Enhancement
Qualification
AEC-Q101
Factory Pack QuantityFactory Pack Quantity
800
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
子类别
MOSFETs
功率耗散
166.7
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3mOhm @ 90A, 10V
输入电容(Ciss)(Max)@Vds
7180 pF @ 20 V
门极电荷(Qg)(最大)@Vgs
77.5 nC @ 10 V
漏源电压 (Vdss)
40 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
DMTH4002SCTBQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated






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