Diodes Incorporated DMTH4014LFVWQ-13
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DMTH4014LFVWQ-13
671-DMTH4014LFVWQ-13
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

MOSFET BVDSS: 31V~40V POWERDI333
1最小包装量--
DMTH4014LFVWQ-13详情
Diodes Incorporated DMTH4014LFVWQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8 (SWP) Type UX
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
11.5A (Ta), 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
Power Dissipation (Max)
3.1W
Continuous Drain Current Id
49.8
Qualification
AEC-Q101
Factory Pack QuantityFactory Pack Quantity
3000
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
RoHS
Details
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
57.7 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
11.2 nC
Rds On - Drain-Source Resistance
13.7 mOhms
Id - Continuous Drain Current
49.8 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
功率耗散
57.7
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
13.7mOhm @ 20A, 10V
输入电容(Ciss)(Max)@Vds
750 pF @ 20 V
门极电荷(Qg)(最大)@Vgs
11.2 nC @ 10 V
漏源电压 (Vdss)
40 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
DMTH4014LFVWQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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