Diodes Incorporated DMTH61M8LPSQ-13
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DMTH61M8LPSQ-13
671-DMTH61M8LPSQ-13
晶体管 - FET,MOSFET - 单个
8-PowerTDFN
大陆
立即发货

MOSFET BVDSS: 41V~60V POWERDI506
1最小包装量--
DMTH61M8LPSQ-13详情
Diodes Incorporated DMTH61M8LPSQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
PowerDI5060-8 (Type K)
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
Power Dissipation (Max)
3.2W (Ta), 187.5W (Tc)
Continuous Drain Current Id
225
Vds - Drain-Source Breakdown Voltage
60 V
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
3.2 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
53.3 nC
Rds On - Drain-Source Resistance
1.6 mOhms
Id - Continuous Drain Current
225 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
Reel
子类别
MOSFETs
通道数量
1 Channel
功率耗散
187.5
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.6mOhm @ 30A, 10V
输入电容(Ciss)(Max)@Vds
8320 pF @ 30 V
门极电荷(Qg)(最大)@Vgs
115.5 nC @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
DMTH61M8LPSQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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