Diodes Incorporated DMTH8008LPSQ-13
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DMTH8008LPSQ-13
671-DMTH8008LPSQ-13
晶体管 - FET,MOSFET - 单个
8-PowerTDFN
大陆
立即发货

MOSFET BVDSS: 61V~100V POWERDI50
1最小包装量--
DMTH8008LPSQ-13详情
Diodes Incorporated DMTH8008LPSQ-13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
PowerDI5060-8
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.8V @ 1mA
Power Dissipation (Max)
1.6W (Ta), 100W (Tc)
Continuous Drain Current Id
91
Vds - Drain-Source Breakdown Voltage
80 V
Typical Turn-On Delay Time
5.8 ns
Vgs th - Gate-Source Threshold Voltage
2.8 V
Pd - Power Dissipation
1.6 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.003422 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Qg - Gate Charge
41.2 nC
Rds On - Drain-Source Resistance
7.8 mOhms
Typical Turn-Off Delay Time
24.5 ns
Id - Continuous Drain Current
91 A
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 175°C (TJ)
包装
Reel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
100
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
7.8mOhm @ 14A, 10V
输入电容(Ciss)(Max)@Vds
2345 pF @ 40 V
门极电荷(Qg)(最大)@Vgs
41.2 nC @ 10 V
上升时间
5.4 ns
漏源电压 (Vdss)
80 V
Vgs(最大值)
±20V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
DMTH8008LPSQ-13拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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