Diodes Incorporated DMWSH120H28SM4
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DMWSH120H28SM4
671-DMWSH120H28SM4
晶体管 - FET,MOSFET - 单个
TO-247-4
大陆
立即发货

SIC MOSFET BVDSS: >1000V TO247-4
--最小包装量--
DMWSH120H28SM4详情
Diodes Incorporated DMWSH120H28SM4重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-4
供应商器件包装
TO-247-4
厂商
Diodes Incorporated
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.6V @ 17.7mA
Power Dissipation (Max)
429W (Tc)
包装
Tube
操作温度
-55°C ~ 175°C (TJ)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
28.5mOhm @ 50A, 15V
输入电容(Ciss)(Max)@Vds
3944 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
173.7 nC @ 15 V
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+19V, -8V
DMWSH120H28SM4拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated








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