Diodes Incorporated HBDM60V600X-7
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HBDM60V600X-7
671-HBDM60V600X-7
晶体管 - 双极性晶体管(BJT)- 阵列
6-TSSOP, SC-88, SOT-363
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FUNCTIONAL ARRAY SOT363 T&R 3K
1最小包装量--
HBDM60V600X-7详情
Diodes Incorporated HBDM60V600X-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
供应商器件包装
SOT-363
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
600mA, 500mA
Emitter- Base Voltage VEBO
5.5 V, 6 V
Pd - Power Dissipation
200 mW
Transistor Polarity
NPN, PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
100
Collector-Emitter Saturation Voltage
300 mV, 200 mV
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Maximum DC Collector Current
600 mA, 500 mA
Collector- Emitter Voltage VCEO Max
60 V, 65 V
系列
-
操作温度
-55°C ~ 150°C
配置
Dual
功率 - 最大
200mW
晶体管类型
1 NPN, 1 PNP (H-Bridge)
最小直流增益(hFE)@ Ic, Vce
250 @ 10mA, 1V / 100 @ 150mA, 10V
最大集极截止电流
100nA, 50nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
电压 - 集射极击穿(最大值)
60V, 80V
频率转换
-
集电极基极电压(VCBO)
60 V, 80 V
HBDM60V600X-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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