Diodes Incorporated MMDT5451Q-7
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MMDT5451Q-7
671-MMDT5451Q-7
晶体管 - 双极性晶体管(BJT)- 阵列
6-TSSOP, SC-88, SOT-363
大陆
立即发货

SS HI VOLTAGE TRANSISTOR SOT363
1最小包装量--
MMDT5451Q-7详情
Diodes Incorporated MMDT5451Q-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-TSSOP, SC-88, SOT-363
供应商器件包装
SOT-363
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
200mA
Brand
Diodes Incorporated
Manufacturer
Diodes Incorporated
Factory Pack QuantityFactory Pack Quantity
3000
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
320 mW
Transistor Polarity
NPN, PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
80
Collector-Emitter Saturation Voltage
200 mV, 500 mV
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
300 MHz
Maximum DC Collector Current
200 mA
Collector- Emitter Voltage VCEO Max
160 V, 150 V
系列
Automotive, AEC-Q101
操作温度
-55°C ~ 150°C (TJ)
配置
Dual
功率 - 最大
200mW
晶体管类型
NPN, PNP
最小直流增益(hFE)@ Ic, Vce
80 @ 10mA, 5V / 60 @ 10mA, 5V
最大集极截止电流
50nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
电压 - 集射极击穿(最大值)
160V, 150V
频率转换
300MHz
集电极基极电压(VCBO)
180 V, 160 V
产品类别
Diodes Inc.
MMDT5451Q-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
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