Dynex Semiconductor DIM1200ASM45-TS001
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DIM1200ASM45-TS001
2436-DIM1200ASM45-TS001
晶体管 - IGBT - 单个
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Description: Insulated Gate Bipolar Transistor, 1200A I(C), 4500V V(BR)CES
1最小包装量--
DIM1200ASM45-TS001详情
Dynex Semiconductor DIM1200ASM45-TS001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Rohs Code
有
Part Life Cycle Code
接触制造商
Ihs Manufacturer
DYNEX SEMICONDUCTOR LTD
Package Description
,
Number of Elements
3
Operating Temperature-Max
125 °C
ECCN 代码
EAR99
Reach合规守则
unknown
最大耗散功率(Abs)
12500 W
集电极电流-最大值(IC)
1200 A
集电极-发射器电压-最大值
4500 V
栅极-发射极电压-最大值
20 V
DIM1200ASM45-TS001拓展信息
ABB Semiconductors
Dynex Semiconductor
ABB Semiconductors
Dynex Semiconductor
Dynex Semiconductor
Dynex Semiconductor







哦! 它是空的。