GeneSiC Semiconductor G2R1000MT17D

包装/外壳

QFN

安装类型

通孔

供应商器件包装

TO-247-3

Standard Frequency

148.35

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

2.75(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

无

Continuous Drain Current Id

4A

Vds - Drain-Source Breakdown Voltage

1.7 kV

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

44 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

0.76 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

1 Ohms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

5 A

Package

Tube

Base Product Number

G2R1000

Current - Continuous Drain (Id) @ 25℃

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

53W (Tc)

Product Status

活跃

包装

Bulk

系列

G2R

操作温度

-55°C ~ 175°C (TJ)

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

SiC

频率稳定性

±20(ppm)

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

负载电容

15(pF)

功率耗散

53W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 2A, 20V

不同 Id 时 Vgs(th)（最大值）

4V @ 2mA

输入电容(Ciss)(Max)@Vds

139 pF @ 1000 V

上升时间

19 ns

漏源电压 (Vdss)

1700 V

Vgs（最大值）

+20V, -5V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET