GeneSiC Semiconductor G3R30MT12K

包装/外壳

QFN

安装类型

通孔

供应商器件包装

TO-247-4

Standard Frequency

33.333

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

3.63(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

无

Continuous Drain Current Id

90A

Package

Tube

Base Product Number

G3R30

Current - Continuous Drain (Id) @ 25℃

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

400W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

281 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

118 nC

Rds On - Drain-Source Resistance

30 mOhms

Id - Continuous Drain Current

70 A

包装

Bulk

操作温度

-55°C ~ 175°C (TJ)

系列

G3R™

类型

CLOCK OSCILLATOR

技术

SiCFET (Silicon Carbide)

频率稳定性

±25(ppm)

对称性-最大值

55(%)

通道数量

1 Channel

负载电容

15(pF)

功率耗散

400W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

36mOhm @ 50A, 15V

不同 Id 时 Vgs(th)（最大值）

2.69V @ 12mA

输入电容(Ciss)(Max)@Vds

3901 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

155 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±15V

信道型

N通道

场效应管特性

-