GeneSiC Semiconductor G3R350MT12J

包装/外壳

TO-263-7

安装类型

表面贴装

供应商器件包装

TO-263-7

Continuous Drain Current Id

11A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

64 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.8 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

350 mOhms

RoHS

Details

Typical Turn-Off Delay Time

6 ns

Id - Continuous Drain Current

10 A

Package

Tube

Base Product Number

G3R350

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

75W (Tc)

Product Status

活跃

系列

G3R

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

类型

SiC MOSFET

子类别

MOSFETs

技术

SiC

配置

Single

通道数量

1 Channel

功率耗散

75W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

420mOhm @ 4A, 15V

不同 Id 时 Vgs(th)（最大值）

2.69V @ 2mA

输入电容(Ciss)(Max)@Vds

334 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

12 nC @ 15 V

上升时间

5 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±15V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET